| PART |
Description |
Maker |
| AS5SS256K36ADQ-8.5XT AS5SS256K36ADQ-10IT AS5SS256K |
256K x 36 SSRAM - synchronous burst SRAM, flow-thru
|
Austin Semiconductor
|
| AS5SS256K18DQ-9_XT AS5SS256K18 AS5SS256K18DQ-10_IT |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
AUSTIN[Austin Semiconductor]
|
| AS5SS256K18DQ-8IT |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor, Inc
|
| S8S3122X16-TCR1 |
256K x 16 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M13S32321A |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| UT8SF2M40MSPA |
UT8SF2M40 80Megabit Flow-thru SSRAM
|
Aeroflex Circuit Techno...
|
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
| AS5SS128K36DQ-12_XT AS5SS128K36 AS5SS128K36DQ-11_I |
128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT
|
AUSTIN[Austin Semiconductor]
|
